Edit Profile (opens in new tab) García-Loureiro, Antonio J. Co-Author Distance Author ID: garcia-loureiro.antonio-j Published as: García-Loureiro, Antonio J.; García-Loureiro, A. J.; Garcia-Loureiro, Antonio J.; García-Loureiro, Antonio more...less Documents Indexed: 11 Publications since 1998 1 Contribution as Editor Co-Authors: 8 Co-Authors with 12 Joint Publications 14 Co-Co-Authors all top 5 Co-Authors 0 single-authored 4 Aldegunde, Manuel 4 Lopez-Gonzalez, Juan M. 4 Seoane, Natalia 3 Kalna, Karol 3 Pena, Tomás F. 2 Prat, Lluis 1 Millán, José 1 Pombo, Juan J. Serials 8 International Journal of Numerical Modelling 1 Computer Physics Communications 1 International Journal for Numerical Methods in Engineering all top 5 Fields 10 Numerical analysis (65-XX) 8 Statistical mechanics, structure of matter (82-XX) 3 Partial differential equations (35-XX) 3 Optics, electromagnetic theory (78-XX) 1 General and overarching topics; collections (00-XX) 1 Information and communication theory, circuits (94-XX) Publications by Year Citations contained in zbMATH Open 5 Publications have been cited 9 times in 5 Documents Cited by ▼ Year ▼ Study of parallel numerical methods for semiconductor device simulation. Zbl 1155.82342 Seoane, Natalia; García-Loureiro, Antonio J. 3 2006 Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices. Zbl 1104.82050 Aldegunde, M.; Pombo, Juan J.; García-Loureiro, A. J. 2 2006 Parallel finite element method to solve the 3D Poisson equation and its application to abrupt heterojunction bipolar transistors. Zbl 0959.78013 Garcia-Loureiro, Antonio J.; Pena, Tomas F.; Lopez-Gonzalez, Juan M.; Prat, Lluis 2 2000 Numerical analysis of abrupt heterojunction bipolar transistors. Zbl 0909.65128 Garcia-Loureiro, Antonio J.; Lopez-Gonzalez, Juan M.; Pena, Tomas F.; Prat, Lluis 1 1998 A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors. Zbl 1034.82066 García-Loureiro, Antonio J.; López-González, J. M.; Pena, Tomás F. 1 2003 Study of parallel numerical methods for semiconductor device simulation. Zbl 1155.82342 Seoane, Natalia; García-Loureiro, Antonio J. 3 2006 Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices. Zbl 1104.82050 Aldegunde, M.; Pombo, Juan J.; García-Loureiro, A. J. 2 2006 A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors. Zbl 1034.82066 García-Loureiro, Antonio J.; López-González, J. M.; Pena, Tomás F. 1 2003 Parallel finite element method to solve the 3D Poisson equation and its application to abrupt heterojunction bipolar transistors. Zbl 0959.78013 Garcia-Loureiro, Antonio J.; Pena, Tomas F.; Lopez-Gonzalez, Juan M.; Prat, Lluis 2 2000 Numerical analysis of abrupt heterojunction bipolar transistors. Zbl 0909.65128 Garcia-Loureiro, Antonio J.; Lopez-Gonzalez, Juan M.; Pena, Tomas F.; Prat, Lluis 1 1998 all top 5 Cited by 9 Authors 3 García-Loureiro, Antonio J. 2 Aldegunde, Manuel 1 Kalna, Karol 1 Lopez-Gonzalez, Juan M. 1 Mackerle, Jaroslav 1 Odanaka, Shinji 1 Pena, Tomás F. 1 Seoane, Natalia 1 Sho, Shohiro Cited in 3 Serials 2 International Journal of Numerical Modelling 1 Computer Physics Communications 1 Engineering Computations Cited in 4 Fields 5 Numerical analysis (65-XX) 4 Statistical mechanics, structure of matter (82-XX) 1 Partial differential equations (35-XX) 1 Mechanics of deformable solids (74-XX) Citations by Year