Mathis, W.; Felgenhauer, F.; Fabel, S. Quantum transport, quantum effects and circuit functionality of nanostructured electronic circuits. (English) Zbl 1060.94513 Int. J. Circuit Theory Appl. 32, No. 5, 407-424 (2004). Summary: This paper presents a discussion of the impact of quantum effects to classical circuits. We provide a brief introduction to our developed numerical tools to simulate electron tunnelling and energy discretization in MOS structures. Regarding these results a few arguments for simulating circuits including these effects are given. Cited in 1 Document MSC: 94C05 Analytic circuit theory 82C70 Transport processes in time-dependent statistical mechanics 81P68 Quantum computation Keywords:transport processes; quantum effects; MOS devices; circuit simulation PDFBibTeX XMLCite \textit{W. Mathis} et al., Int. J. Circuit Theory Appl. 32, No. 5, 407--424 (2004; Zbl 1060.94513) Full Text: DOI