Radmilović-Radjenović, M.; Radjenović, B.; Savić, M. The surface charging effects in three-dimensional simulation of the profiles of plasma-etched nanostructures. (English) Zbl 1245.78013 Int. J. Numer. Model. 24, No. 6, 535-544 (2011). MSC: 78M10 78A35 82D10 82D37 PDFBibTeX XMLCite \textit{M. Radmilović-Radjenović} et al., Int. J. Numer. Model. 24, No. 6, 535--544 (2011; Zbl 1245.78013) Full Text: DOI
Liu, Fan; Wang, Jianhua; Dai, Songyuan Numerical simulation and design of a new microwave annular waveguide plasma source. I: Simulations without the plasma parameters. (English) Zbl 1245.78006 Int. J. Numer. Model. 24, No. 6, 526-534 (2011). MSC: 78A50 78A40 82D10 PDFBibTeX XMLCite \textit{F. Liu} et al., Int. J. Numer. Model. 24, No. 6, 526--534 (2011; Zbl 1245.78006) Full Text: DOI
Zarȩbski, J.; Dąbrowski, J. Investigations of SiC merged pin Schottky diodes under isothermal and non-isothermal conditions. (English) Zbl 1221.82143 Int. J. Numer. Model. 24, No. 3, 207-217 (2011). MSC: 82D37 78A55 82-08 PDFBibTeX XMLCite \textit{J. Zarȩbski} and \textit{J. Dąbrowski}, Int. J. Numer. Model. 24, No. 3, 207--217 (2011; Zbl 1221.82143) Full Text: DOI
Valsa, Juraj; Biolek, Dalibor; Biolek, Zdeněk An analogue model of the memristor. (English) Zbl 1220.78080 Int. J. Numer. Model. 24, No. 4, 400-408 (2011). MSC: 78A55 82D37 82D80 PDFBibTeX XMLCite \textit{J. Valsa} et al., Int. J. Numer. Model. 24, No. 4, 400--408 (2011; Zbl 1220.78080) Full Text: DOI
Debbar, Nacer Investigation of the dark electrical characteristics of the lateral metal-semiconductor-metal photodetectors using two-dimensional numerical simulation. (English) Zbl 1221.82133 Int. J. Numer. Model. 24, No. 4, 335-344 (2011). MSC: 82D37 82D35 82C70 78A35 78M20 65N06 65H10 PDFBibTeX XMLCite \textit{N. Debbar}, Int. J. Numer. Model. 24, No. 4, 335--344 (2011; Zbl 1221.82133) Full Text: DOI
Sabry, Yasser M.; Abdolkader, Tarek M.; Farouk, Wael F. Simulation of quantum transport in double-gate MOSFETs using the non-equilibrium Green’s function formalism in real-space: A comparison of four methods. (English) Zbl 1221.82092 Int. J. Numer. Model. 24, No. 4, 322-334 (2011). MSC: 82C70 82D80 82D37 35J10 65M80 82-08 PDFBibTeX XMLCite \textit{Y. M. Sabry} et al., Int. J. Numer. Model. 24, No. 4, 322--334 (2011; Zbl 1221.82092) Full Text: DOI
Settaouti, L.; Settaouti, A. Monte Carlo simulation of radio-frequency plasmas in N\(_{2}\). (English) Zbl 1210.78030 Int. J. Numer. Model. 24, No. 2, 99-110 (2011). MSC: 78M32 82D10 PDFBibTeX XMLCite \textit{L. Settaouti} and \textit{A. Settaouti}, Int. J. Numer. Model. 24, No. 2, 99--110 (2011; Zbl 1210.78030) Full Text: DOI
Cos, J.; Ferré-Borrull, J.; Pallarès, J.; Marsal, L. F. Double-cavity Fabry-Pérot tunable equalizer based on 1D photonic crystals. (English) Zbl 1197.82115 Int. J. Numer. Model. 23, No. 4-5, 400-410 (2010). MSC: 82D30 78A60 PDFBibTeX XMLCite \textit{J. Cos} et al., Int. J. Numer. Model. 23, No. 4--5, 400--410 (2010; Zbl 1197.82115) Full Text: DOI
Palomo, F. R.; Fernández-Martínez, P.; Mogollón, J. M.; Hidalgo, S.; Aguirre, M. A.; Flores, D.; López-Calle, I.; de Agapito, J. A. Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models. (English) Zbl 1197.78056 Int. J. Numer. Model. 23, No. 4-5, 379-399 (2010). MSC: 78A60 82D37 35J25 78M10 82C70 PDFBibTeX XMLCite \textit{F. R. Palomo} et al., Int. J. Numer. Model. 23, No. 4--5, 379--399 (2010; Zbl 1197.78056) Full Text: DOI
Albareda, G.; Alarcón, A.; Oriols, X. Electric power in nanoscale devices with full Coulomb interaction. (English) Zbl 1198.82078 Int. J. Numer. Model. 23, No. 4-5, 354-363 (2010). MSC: 82D77 82D37 81V70 82C22 PDFBibTeX XMLCite \textit{G. Albareda} et al., Int. J. Numer. Model. 23, No. 4--5, 354--363 (2010; Zbl 1198.82078) Full Text: DOI
Kowalski, L.; Ricart, J.; Jiménez, V.; Domínguez, M.; Castañer, L. Thermal modelling of the chip for the REMS wind sensor. (English) Zbl 1197.82112 Int. J. Numer. Model. 23, No. 4-5, 340-353 (2010). MSC: 82D10 80A20 76P05 85A20 PDFBibTeX XMLCite \textit{L. Kowalski} et al., Int. J. Numer. Model. 23, No. 4--5, 340--353 (2010; Zbl 1197.82112) Full Text: DOI
Guardiola, C.; Fleta, C.; Lozano, M.; Pellegrini, G. Silicon planar detectors adapted to slow neutron detection. (English) Zbl 1197.82135 Int. J. Numer. Model. 23, No. 4-5, 324-331 (2010). MSC: 82D75 82D37 PDFBibTeX XMLCite \textit{C. Guardiola} et al., Int. J. Numer. Model. 23, No. 4--5, 324--331 (2010; Zbl 1197.82135) Full Text: DOI
Luque Rodríguez, A.; Jiménez Tejada, J. A.; Godoy, A.; López Villanueva, J. A.; Gómez-Campos, F. M.; Rodríguez-Bolivar, S. Localization and quantification of noise sources in four-gate field-effect-transistors. (English) Zbl 1196.82130 Int. J. Numer. Model. 23, No. 4-5, 285-300 (2010). MSC: 82D37 PDFBibTeX XMLCite \textit{A. Luque Rodríguez} et al., Int. J. Numer. Model. 23, No. 4--5, 285--300 (2010; Zbl 1196.82130) Full Text: DOI
Aboy, Maria; Pelaz, Lourdes; López, Pedro; Bruno, E.; Mirabella, S. Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions. (English) Zbl 1210.82066 Int. J. Numer. Model. 23, No. 4-5, 266-284 (2010). Reviewer: Giovanni Mascali (Arcavacata di Rende) MSC: 82D37 82C80 PDFBibTeX XMLCite \textit{M. Aboy} et al., Int. J. Numer. Model. 23, No. 4--5, 266--284 (2010; Zbl 1210.82066) Full Text: DOI
Sadi, T.; Thobel, J.-L. A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices. (English) Zbl 1191.78058 Int. J. Numer. Model. 23, No. 3, 200-214 (2010). MSC: 78M31 82D37 PDFBibTeX XMLCite \textit{T. Sadi} and \textit{J. L. Thobel}, Int. J. Numer. Model. 23, No. 3, 200--214 (2010; Zbl 1191.78058) Full Text: DOI
Chibante, R.; Araújo, A.; Carvalho, Adriano Finite element power diode model optimized through experiment-based parameter extraction. (English) Zbl 1175.82074 Int. J. Numer. Model. 22, No. 5, 351-367 (2009). MSC: 82D37 65M60 65K10 35Q82 82B80 90C59 PDFBibTeX XMLCite \textit{R. Chibante} et al., Int. J. Numer. Model. 22, No. 5, 351--367 (2009; Zbl 1175.82074) Full Text: DOI
Brinson, M. E.; Jahn, S. Qucs: a GPL software package for circuit simulation, compact device modelling and circuit macromodelling from DC to RF and beyond. (English) Zbl 1171.82003 Int. J. Numer. Model. 22, No. 4, 297-319 (2009). MSC: 82-04 82D37 PDFBibTeX XMLCite \textit{M. E. Brinson} and \textit{S. Jahn}, Int. J. Numer. Model. 22, No. 4, 297--319 (2009; Zbl 1171.82003) Full Text: DOI Link
Chaujar, Rishu; Kaur, Ravneet; Saxena, Manoj; Gupta, Mridula; Gupta, R. S. Investigation of multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) sub-50 nm MOSFET: A novel design. (English) Zbl 1162.82324 Int. J. Numer. Model. 22, No. 3, 259-278 (2009). MSC: 82D37 78A55 PDFBibTeX XMLCite \textit{R. Chaujar} et al., Int. J. Numer. Model. 22, No. 3, 259--278 (2009; Zbl 1162.82324) Full Text: DOI
Seoane, Natalia; García-Loureiro, Antonio; Aldegunde, Manuel Optimization of linear systems for 3D parallel simulation of semiconductor devices: Application to statistical studies. (English) Zbl 1162.82027 Int. J. Numer. Model. 22, No. 3, 235-258 (2009). MSC: 82D37 35J05 65Y05 65F05 65N55 65F10 PDFBibTeX XMLCite \textit{N. Seoane} et al., Int. J. Numer. Model. 22, No. 3, 235--258 (2009; Zbl 1162.82027) Full Text: DOI
Stark, G. A.; Mishrikey, M.; Robin, F.; Jaeckel, H.; Hafner, C.; Vahldieck, R.; Erni, D. Positional dependence of FDTD mode detection in photonic crystal systems. (English) Zbl 1156.82404 Int. J. Numer. Model. 22, No. 2, 201-218 (2009). MSC: 82D25 82C80 PDFBibTeX XMLCite \textit{G. A. Stark} et al., Int. J. Numer. Model. 22, No. 2, 201--218 (2009; Zbl 1156.82404) Full Text: DOI
Kougianos, Elias; Mohanty, Saraju P. Discretization techniques for the efficient solution of the eigenvalue problem in heterostructures. (English) Zbl 1156.82023 Int. J. Numer. Model. 22, No. 1, 1-21 (2009). MSC: 82D37 78A55 82D25 PDFBibTeX XMLCite \textit{E. Kougianos} and \textit{S. P. Mohanty}, Int. J. Numer. Model. 22, No. 1, 1--21 (2009; Zbl 1156.82023) Full Text: DOI
Kriplani, Nikhil M.; Luniya, Sonali R.; Steer, Michael B. Integrated deterministic and stochastic simulation of electronic circuits: application to large signal-noise analysis. (English) Zbl 1211.78007 Int. J. Numer. Model. 21, No. 6, 381-394 (2008). MSC: 78A25 82C31 94C05 65C30 PDFBibTeX XMLCite \textit{N. M. Kriplani} et al., Int. J. Numer. Model. 21, No. 6, 381--394 (2008; Zbl 1211.78007) Full Text: DOI
Abdolkader, Tarek M. A new approach for numerical simulation of quantum transport in double-gate SOI. (English) Zbl 1206.82085 Int. J. Numer. Model. 20, No. 6, 299-309 (2007). MSC: 82C70 PDFBibTeX XMLCite \textit{T. M. Abdolkader}, Int. J. Numer. Model. 20, No. 6, 299--309 (2007; Zbl 1206.82085) Full Text: DOI
Cole, E. A. B. Integral evaluation in semiconductor device modelling using simulated annealing with Bose-Einstein statistics. (English) Zbl 1203.82110 Int. J. Numer. Model. 20, No. 4, 197-215 (2007). MSC: 82D37 68T05 90C59 82-08 65D20 82C10 78A40 PDFBibTeX XMLCite \textit{E. A. B. Cole}, Int. J. Numer. Model. 20, No. 4, 197--215 (2007; Zbl 1203.82110) Full Text: DOI
Li, Szu-Ju; Dai, Jing-Fu; Chang, Chia-Cherng; Huang, Chau-Hsin; Tsai, Yao-Tsung Development of 3-D equivalent-circuit modelling with decoupled L-ILU factorization in semiconductor-device simulation. (English) Zbl 1119.82041 Int. J. Numer. Model. 20, No. 3, 133-148 (2007). Reviewer: Andreas Knorr (Berlin) MSC: 82D37 94C30 PDFBibTeX XMLCite \textit{S.-J. Li} et al., Int. J. Numer. Model. 20, No. 3, 133--148 (2007; Zbl 1119.82041) Full Text: DOI
Ahmed, Moustafa; Mahmoud, Safwat W. Z.; Yamada, Minoru Numerical analysis of optical feedback phenomenon and intensity noise of fibre-grating semiconductor lasers. (English) Zbl 1241.82085 Int. J. Numer. Model. 20, No. 3, 117-132 (2007). MSC: 82D37 78A60 PDFBibTeX XMLCite \textit{M. Ahmed} et al., Int. J. Numer. Model. 20, No. 3, 117--132 (2007; Zbl 1241.82085) Full Text: DOI Link
Li, Szu-Ju; Ho, Chi-Hon; Tsai, Yao-Tsung Kronig-Penney model simulation with equivalent circuit method. (English) Zbl 1241.82013 Int. J. Numer. Model. 20, No. 3, 109-116 (2007). MSC: 82B10 82B20 PDFBibTeX XMLCite \textit{S.-J. Li} et al., Int. J. Numer. Model. 20, No. 3, 109--116 (2007; Zbl 1241.82013) Full Text: DOI
Soltani Mohammadi, Y.; Abdipour, A.; Mohammadi, A.; Moradi, G. Efficient numerical simulation of GaAs MESFET’s based on energy model and using interpolating wavelet. (English) Zbl 1107.82408 Int. J. Numer. Model. 19, No. 5, 433-451 (2006). MSC: 82D37 65T60 82-08 82C70 65N50 PDFBibTeX XMLCite \textit{Y. Soltani Mohammadi} et al., Int. J. Numer. Model. 19, No. 5, 433--451 (2006; Zbl 1107.82408) Full Text: DOI
Luhmann, Katrin; Ochs, Karlheinz A novel interpretation of the hyperbolization method used to solve the parabolic neutron diffusion equations by means of the wave digital concept. (English) Zbl 1107.82075 Int. J. Numer. Model. 19, No. 4, 345-364 (2006). MSC: 82D75 82-08 PDFBibTeX XMLCite \textit{K. Luhmann} and \textit{K. Ochs}, Int. J. Numer. Model. 19, No. 4, 345--364 (2006; Zbl 1107.82075) Full Text: DOI
Abdolkader, Tarek M.; Farouk, Wael Fikry; Omar, O. A.; Hassan, Mahmoud Fathy Mahmoud FETMOSS: a software tool for 2D simulation of double-gate MOSFET. (English) Zbl 1107.82400 Int. J. Numer. Model. 19, No. 4, 301-314 (2006). MSC: 82D37 82-08 65N06 65N30 PDFBibTeX XMLCite \textit{T. M. Abdolkader} et al., Int. J. Numer. Model. 19, No. 4, 301--314 (2006; Zbl 1107.82400) Full Text: DOI
Aldegunde, M.; Pombo, Juan J.; García-Loureiro, A. J. Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices. (English) Zbl 1104.82050 Int. J. Numer. Model. 19, No. 6, 473-489 (2006). MSC: 82D37 65N50 PDFBibTeX XMLCite \textit{M. Aldegunde} et al., Int. J. Numer. Model. 19, No. 6, 473--489 (2006; Zbl 1104.82050) Full Text: DOI
Movahhedi, M.; Abdipour, A.; Dehghan, M. Accelerating the transient simulation of semiconductor devices using filter-bank transforms. (English) Zbl 1091.82016 Int. J. Numer. Model. 19, No. 1, 47-67 (2006). MSC: 82D37 PDFBibTeX XMLCite \textit{M. Movahhedi} et al., Int. J. Numer. Model. 19, No. 1, 47--67 (2006; Zbl 1091.82016) Full Text: DOI
Seoane, Natalia; García-Loureiro, Antonio J. Study of parallel numerical methods for semiconductor device simulation. (English) Zbl 1155.82342 Int. J. Numer. Model. 19, No. 1, 15-32 (2006). MSC: 82D37 65Y05 65F22 PDFBibTeX XMLCite \textit{N. Seoane} and \textit{A. J. García-Loureiro}, Int. J. Numer. Model. 19, No. 1, 15--32 (2006; Zbl 1155.82342) Full Text: DOI
Diana, Roberto; Giorgio, Agostino; Perri, Anna Gina Theoretical characterization of multilayer photonic crystals having a 2D periodicity. (English) Zbl 1080.78011 Int. J. Numer. Model. 18, No. 5, 365-382 (2005). Reviewer: Aleksander Pankov (Williamsburg) MSC: 78A60 82D25 PDFBibTeX XMLCite \textit{R. Diana} et al., Int. J. Numer. Model. 18, No. 5, 365--382 (2005; Zbl 1080.78011) Full Text: DOI
García-Loureiro, A. J.; Kalna, K.; Asenov, A. Efficient three-dimensional parallel simulations of PHEMTs. (English) Zbl 1077.82558 Int. J. Numer. Model. 18, No. 5, 327-340 (2005). MSC: 82D37 82-08 PDFBibTeX XMLCite \textit{A. J. García-Loureiro} et al., Int. J. Numer. Model. 18, No. 5, 327--340 (2005; Zbl 1077.82558) Full Text: DOI
Felgenhauer, F.; Begoin, M.; Mathis, W. Analysis of parasitic quantum effects in classical CMOS circuits. (English) Zbl 1100.82022 Int. J. Numer. Model. 18, No. 4, 313-323 (2005). Reviewer: Michael Baro (Berlin) MSC: 82C70 65Z05 94C05 82D37 PDFBibTeX XMLCite \textit{F. Felgenhauer} et al., Int. J. Numer. Model. 18, No. 4, 313--323 (2005; Zbl 1100.82022) Full Text: DOI
de Cogan, D.; Rak, M. Accelerated convergence in numerical simulations of surface supersaturation for crystal growth in solution under steady-state conditions. (English) Zbl 1059.82041 Int. J. Numer. Model. 18, No. 2, 133-148 (2005). MSC: 82D25 PDFBibTeX XMLCite \textit{D. de Cogan} and \textit{M. Rak}, Int. J. Numer. Model. 18, No. 2, 133--148 (2005; Zbl 1059.82041) Full Text: DOI
Dai, Jing-Fu; Chang, Chia-Cherng; Lee, Jia-Wen; Li, Szu-Ju; Tsai, Yao-Tsung Simplified equivalent-circuit modelling for decoupled and partial decoupled methods in semiconductor device simulation. (English) Zbl 1161.82368 Int. J. Numer. Model. 17, No. 5, 421-432 (2004). Reviewer: Andreas Knorr (Berlin) MSC: 82D37 PDFBibTeX XMLCite \textit{J.-F. Dai} et al., Int. J. Numer. Model. 17, No. 5, 421--432 (2004; Zbl 1161.82368) Full Text: DOI
Ahmed, Moustafa Numerical approach to field fluctuations and spectral lineshape in InGaAsP laser diodes. (English) Zbl 1044.82019 Int. J. Numer. Model. 17, No. 2, 147-163 (2004). MSC: 82D37 PDFBibTeX XMLCite \textit{M. Ahmed}, Int. J. Numer. Model. 17, No. 2, 147--163 (2004; Zbl 1044.82019) Full Text: DOI
Ding, C. H.; Wu, S. D.; Chou, J. H. The crosstalk characteristics of different PCB layouts with multiconductor transmission line. (English) Zbl 1206.82139 Int. J. Numer. Model. 17, No. 2, 135-146 (2004). MSC: 82D50 PDFBibTeX XMLCite \textit{C. H. Ding} et al., Int. J. Numer. Model. 17, No. 2, 135--146 (2004; Zbl 1206.82139) Full Text: DOI
Paul, J.; Christopoulos, C.; Thomas, D. W. P. Time-domain simulation of electromagnetic wave propagation in saturating ferromagnetic materials. (English) Zbl 1044.78010 Int. J. Numer. Model. 17, No. 3, 207-222 (2004). MSC: 78M25 82D40 PDFBibTeX XMLCite \textit{J. Paul} et al., Int. J. Numer. Model. 17, No. 3, 207--222 (2004; Zbl 1044.78010) Full Text: DOI
Aste, Andreas; Vahldieck, Rüdiger; Rohner, Marcel Full hydrodynamic simulation of GaAs MESFETs. (English) Zbl 1188.82141 Int. J. Numer. Model. 17, No. 1, 43-59 (2004). MSC: 82D37 PDFBibTeX XMLCite \textit{A. Aste} et al., Int. J. Numer. Model. 17, No. 1, 43--59 (2004; Zbl 1188.82141) Full Text: DOI arXiv
Yang, Geng; Wang, Shaodi; Wang, Ruchuan An efficient preconditioning technique for numerical simulation of hydrodynamic model semiconductor devices. (English) Zbl 1023.82009 Int. J. Numer. Model. 16, No. 4, 387-400 (2003). MSC: 82D37 82B80 65M60 PDFBibTeX XMLCite \textit{G. Yang} et al., Int. J. Numer. Model. 16, No. 4, 387--400 (2003; Zbl 1023.82009) Full Text: DOI
Ahn, Hyungkeun; El-Nokali, M.; Han, Deuk-Young An efficient algorithm for optimizing the electrical performance of HBTs. (English) Zbl 1022.78015 Int. J. Numer. Model. 16, No. 4, 353-365 (2003). MSC: 78M50 82D37 PDFBibTeX XMLCite \textit{H. Ahn} et al., Int. J. Numer. Model. 16, No. 4, 353--365 (2003; Zbl 1022.78015) Full Text: DOI
Kim, Hyoung-Woo; Moon, Jin-Woo; Chung, Sang-Koo A termination structure of 2. 5 kV IGBT with field plate and semi-resistive (SIPOS) layer. (English) Zbl 1019.82504 Int. J. Numer. Model. 16, No. 4, 345-352 (2003). MSC: 82D37 PDFBibTeX XMLCite \textit{H.-W. Kim} et al., Int. J. Numer. Model. 16, No. 4, 345--352 (2003; Zbl 1019.82504) Full Text: DOI
Garcias-Salvá, Pau; López-González, Juan M.; Prat, Lluis Monte Carlo modelling of abrupt InP/InGaAs HBTs. (English) Zbl 1023.82008 Int. J. Numer. Model. 16, No. 4, 319-335 (2003). MSC: 82D37 82B80 PDFBibTeX XMLCite \textit{P. Garcias-Salvá} et al., Int. J. Numer. Model. 16, No. 4, 319--335 (2003; Zbl 1023.82008) Full Text: DOI
Aste, Andreas; Vahldieck, Rüdiger Time-domain simulation of the full hydrodynamic model. (English) Zbl 1014.82033 Int. J. Numer. Model. 16, No. 2, 161-174 (2003). MSC: 82D37 76M20 PDFBibTeX XMLCite \textit{A. Aste} and \textit{R. Vahldieck}, Int. J. Numer. Model. 16, No. 2, 161--174 (2003; Zbl 1014.82033) Full Text: DOI arXiv
Chang, Chia-Cherng; Dai, Jing-Fu; Tsai, Yao-Tsung Verification of 1D BJT numerical simulation and its application to mixed-level device and circuit simulation. (English) Zbl 1035.82503 Int. J. Numer. Model. 16, No. 1, 81-94 (2003). MSC: 82D37 PDFBibTeX XMLCite \textit{C.-C. Chang} et al., Int. J. Numer. Model. 16, No. 1, 81--94 (2003; Zbl 1035.82503) Full Text: DOI
García-Loureiro, Antonio J.; López-González, J. M.; Pena, Tomás F. A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors. (English) Zbl 1034.82066 Int. J. Numer. Model. 16, No. 1, 53-66 (2003). MSC: 82D37 82-08 65N55 PDFBibTeX XMLCite \textit{A. J. García-Loureiro} et al., Int. J. Numer. Model. 16, No. 1, 53--66 (2003; Zbl 1034.82066) Full Text: DOI
Hussain, Shahzad; Cole, Eric A. B.; Snowden, Christopher M. Hot-electron numerical modelling of short gate length pHEMTs applied to novel field plate structures. (English) Zbl 1035.82504 Int. J. Numer. Model. 16, No. 1, 15-28 (2003). MSC: 82D37 PDFBibTeX XMLCite \textit{S. Hussain} et al., Int. J. Numer. Model. 16, No. 1, 15--28 (2003; Zbl 1035.82504) Full Text: DOI
Tsai, Hsiao-Ping; Coccioli, Roberto; Itoh, Tatsuo Time domain global modelling of EM propagation in semiconductor using irregular grids. (English) Zbl 1094.78506 Int. J. Numer. Model. 15, No. 4, 355-370 (2002). MSC: 78M25 82D37 PDFBibTeX XMLCite \textit{H.-P. Tsai} et al., Int. J. Numer. Model. 15, No. 4, 355--370 (2002; Zbl 1094.78506) Full Text: DOI
Wong, Chi Chung A note on the thermal modelling of power semiconductor devices using the network analogue. (English) Zbl 1002.82533 Int. J. Numer. Model. 15, No. 3, 283-286 (2002). MSC: 82D37 PDFBibTeX XMLCite \textit{C. C. Wong}, Int. J. Numer. Model. 15, No. 3, 283--286 (2002; Zbl 1002.82533) Full Text: DOI
Zarȩbski, Janusz; Górecki, Krzysztof Parameters estimation of the d. c. electrothermal model of the bipolar transistor. (English) Zbl 1002.82532 Int. J. Numer. Model. 15, No. 2, 181-194 (2002). MSC: 82D37 78A55 PDFBibTeX XMLCite \textit{J. Zarȩbski} and \textit{K. Górecki}, Int. J. Numer. Model. 15, No. 2, 181--194 (2002; Zbl 1002.82532) Full Text: DOI
Zhang, Jun; Pardhanani, Anand L.; Carey, Graham F. Performance of adaptive dual-dropping ILUT preconditioners in semiconductor dopant diffusion simulation. (English) Zbl 0993.82048 Int. J. Numer. Model. 15, No. 2, 147-167 (2002). MSC: 82D37 PDFBibTeX XMLCite \textit{J. Zhang} et al., Int. J. Numer. Model. 15, No. 2, 147--167 (2002; Zbl 0993.82048) Full Text: DOI
Cheung, W. N. Virtual analogue simulation of semiconductor lasers and photon transport transistors. (English) Zbl 0991.78509 Int. J. Numer. Model. 14, No. 4, 367-377 (2001). MSC: 78A60 82D37 PDFBibTeX XMLCite \textit{W. N. Cheung}, Int. J. Numer. Model. 14, No. 4, 367--377 (2001; Zbl 0991.78509) Full Text: DOI
Torre, M. S.; Masoller, C. Turn-on transient dynamics of a semiconductor laser with optical feedback. (English) Zbl 1002.78527 Int. J. Numer. Model. 14, No. 4, 359-365 (2001). MSC: 78A60 82D37 PDFBibTeX XMLCite \textit{M. S. Torre} and \textit{C. Masoller}, Int. J. Numer. Model. 14, No. 4, 359--365 (2001; Zbl 1002.78527) Full Text: DOI
Pierce, Iestyn; Rees, Paul; Spencer, Paul S.; Shore, K. Alan A novel method for determination of the maximum stable feedback level in laser diodes. (English) Zbl 0986.78504 Int. J. Numer. Model. 14, No. 4, 345-357 (2001). MSC: 78A60 82D37 PDFBibTeX XMLCite \textit{I. Pierce} et al., Int. J. Numer. Model. 14, No. 4, 345--357 (2001; Zbl 0986.78504) Full Text: DOI
Hatakoshi, Gen-ichi; Onomura, Masaaki; Ishikawa, Masayuki Optical, electrical and thermal analysis for GaN semiconductor lasers. (English) Zbl 1002.78526 Int. J. Numer. Model. 14, No. 4, 303-323 (2001). MSC: 78A60 82D37 PDFBibTeX XMLCite \textit{G.-i. Hatakoshi} et al., Int. J. Numer. Model. 14, No. 4, 303--323 (2001; Zbl 1002.78526) Full Text: DOI
Giorgio, Agostino; Perri, Anna Gina Modelling DC characteristics of GaAs MESFETs in a wide range of temperatures. (English) Zbl 1090.82516 Int. J. Numer. Model. 14, No. 1, 1-14 (2001). MSC: 82D37 PDFBibTeX XMLCite \textit{A. Giorgio} and \textit{A. G. Perri}, Int. J. Numer. Model. 14, No. 1, 1--14 (2001; Zbl 1090.82516) Full Text: DOI
van Zyl, Robert R.; Perold, Willem J.; Grobler, Hans An efficient parallel implementation of the Monte Carlo particle simulation algorithm on a network of personal computers. (English) Zbl 0963.65007 Int. J. Numer. Model. 13, No. 4, 369-380 (2000). Reviewer: R.Wegmann (Garching) MSC: 65C35 82D37 65C05 65Y05 65Y10 PDFBibTeX XMLCite \textit{R. R. van Zyl} et al., Int. J. Numer. Model. 13, No. 4, 369--380 (2000; Zbl 0963.65007) Full Text: DOI
Radunović, Desanka; Radunović, Jovan Two-dimensional non-stationary numerical model for MSM structures. (English) Zbl 0946.82052 Int. J. Numer. Model. 12, No. 3, 173-186 (1999). MSC: 82D37 82C80 PDFBibTeX XMLCite \textit{D. Radunović} and \textit{J. Radunović}, Int. J. Numer. Model. 12, No. 3, 173--186 (1999; Zbl 0946.82052) Full Text: DOI
Körner, T. O.; Fichtner, W. Refractive index adaptive gridding for finite-difference time-domain methods. (English) Zbl 0943.78016 Int. J. Numer. Model. 12, No. 1-2, 143-155 (1999). MSC: 78M20 82D37 82C80 78A15 PDFBibTeX XMLCite \textit{T. O. Körner} and \textit{W. Fichtner}, Int. J. Numer. Model. 12, No. 1--2, 143--155 (1999; Zbl 0943.78016) Full Text: DOI