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An analytical study of undoped symmetric double gate MOSFET (SDG). (English) Zbl 1245.78001

Summary: Compact analytical models for the threshold voltage, threshold voltage roll-off and subthreshold swing of an undoped symmetrical double-gate MOSFET have been developed based on the analytical solution of the two-dimensional Poisson equation for potential distribution. The developed models include drain-induced barrier lowering (DIBL) through the \(V_{ds}\)-dependent parameter. The calculated threshold voltage value, obtained from the proposed model, shows a good agreement with the experimental and published results. The simulation results for the potential show that the conduction is highly confined to the surfaces. The threshold voltage sensitivity to the thickness is found to be approximately 0.2%. The model prediction indicates that the subthreshold slope is not linearly related to the DIBL parameter for a thick silicon film. The proposed analytical models not only provide useful insight into the behavior of symmetrical DG MOSFETs but also serve as the basis for compact modeling.

MSC:

78A30 Electro- and magnetostatics
31A30 Biharmonic, polyharmonic functions and equations, Poisson’s equation in two dimensions
35J05 Laplace operator, Helmholtz equation (reduced wave equation), Poisson equation
78A55 Technical applications of optics and electromagnetic theory
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