López-González, Juan M. DC and small-signal comparison of horizontal emitter designs of InGaP/GaAs heterojunction bipolar transistors. (English) Zbl 1179.78082 Int. J. Numer. Model. 22, No. 6, 411-421 (2009). MSC: 78A55 78A45 94C05 78A40 PDFBibTeX XMLCite \textit{J. M. López-González}, Int. J. Numer. Model. 22, No. 6, 411--421 (2009; Zbl 1179.78082) Full Text: DOI
García-Loureiro, Antonio J.; López-González, Juan M. A model for abrupt double heterojunction bipolar transistors. (English) Zbl 1061.78007 Int. J. Numer. Model. 17, No. 1, 29-42 (2004). Reviewer: Andreas Knorr (Berlin) MSC: 78A55 78A30 PDFBibTeX XMLCite \textit{A. J. García-Loureiro} and \textit{J. M. López-González}, Int. J. Numer. Model. 17, No. 1, 29--42 (2004; Zbl 1061.78007) Full Text: DOI
Garcias-Salvá, Pau; López-González, Juan M.; Prat, Lluis Monte Carlo modelling of abrupt InP/InGaAs HBTs. (English) Zbl 1023.82008 Int. J. Numer. Model. 16, No. 4, 319-335 (2003). MSC: 82D37 82B80 PDFBibTeX XMLCite \textit{P. Garcias-Salvá} et al., Int. J. Numer. Model. 16, No. 4, 319--335 (2003; Zbl 1023.82008) Full Text: DOI
García-Loureiro, Antonio J.; López-González, J. M.; Pena, Tomás F. A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors. (English) Zbl 1034.82066 Int. J. Numer. Model. 16, No. 1, 53-66 (2003). MSC: 82D37 82-08 65N55 PDFBibTeX XMLCite \textit{A. J. García-Loureiro} et al., Int. J. Numer. Model. 16, No. 1, 53--66 (2003; Zbl 1034.82066) Full Text: DOI
Garcia-Loureiro, Antonio J.; Lopez-Gonzalez, Juan M.; Pena, Tomas F.; Prat, Lluis Numerical analysis of abrupt heterojunction bipolar transistors. (English) Zbl 0909.65128 Int. J. Numer. Model. 11, No. 4, 221-229 (1998). Reviewer: P.K.Mahanti (Ranchi) MSC: 65Z05 35Q60 65Y05 78A55 PDFBibTeX XMLCite \textit{A. J. Garcia-Loureiro} et al., Int. J. Numer. Model. 11, No. 4, 221--229 (1998; Zbl 0909.65128) Full Text: DOI