García-Loureiro, Antonio (ed.); Millán, José (ed.) Special issue: 7th Spanish conference on electron devices (CDE2009). Selected papers based on the presentations at the conference, Santiago de Compostella, Spain, February 11-13, 2009. (English) Zbl 1198.65010 Int. J. Numer. Model. 23, No. 4-5, 263-410 (2010). MSC: 65-06 00A71 65Z99 94C99 00B25 PDFBibTeX XML
Seoane, Natalia; García-Loureiro, Antonio; Aldegunde, Manuel Optimization of linear systems for 3D parallel simulation of semiconductor devices: Application to statistical studies. (English) Zbl 1162.82027 Int. J. Numer. Model. 22, No. 3, 235-258 (2009). MSC: 82D37 35J05 65Y05 65F05 65N55 65F10 PDFBibTeX XMLCite \textit{N. Seoane} et al., Int. J. Numer. Model. 22, No. 3, 235--258 (2009; Zbl 1162.82027) Full Text: DOI
Aldegunde, M.; Pombo, Juan J.; García-Loureiro, A. J. Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices. (English) Zbl 1104.82050 Int. J. Numer. Model. 19, No. 6, 473-489 (2006). MSC: 82D37 65N50 PDFBibTeX XMLCite \textit{M. Aldegunde} et al., Int. J. Numer. Model. 19, No. 6, 473--489 (2006; Zbl 1104.82050) Full Text: DOI
Seoane, Natalia; García-Loureiro, Antonio J. Study of parallel numerical methods for semiconductor device simulation. (English) Zbl 1155.82342 Int. J. Numer. Model. 19, No. 1, 15-32 (2006). MSC: 82D37 65Y05 65F22 PDFBibTeX XMLCite \textit{N. Seoane} and \textit{A. J. García-Loureiro}, Int. J. Numer. Model. 19, No. 1, 15--32 (2006; Zbl 1155.82342) Full Text: DOI
García-Loureiro, A. J.; Kalna, K.; Asenov, A. Efficient three-dimensional parallel simulations of PHEMTs. (English) Zbl 1077.82558 Int. J. Numer. Model. 18, No. 5, 327-340 (2005). MSC: 82D37 82-08 PDFBibTeX XMLCite \textit{A. J. García-Loureiro} et al., Int. J. Numer. Model. 18, No. 5, 327--340 (2005; Zbl 1077.82558) Full Text: DOI
García-Loureiro, Antonio J.; López-González, Juan M. A model for abrupt double heterojunction bipolar transistors. (English) Zbl 1061.78007 Int. J. Numer. Model. 17, No. 1, 29-42 (2004). Reviewer: Andreas Knorr (Berlin) MSC: 78A55 78A30 PDFBibTeX XMLCite \textit{A. J. García-Loureiro} and \textit{J. M. López-González}, Int. J. Numer. Model. 17, No. 1, 29--42 (2004; Zbl 1061.78007) Full Text: DOI
García-Loureiro, Antonio J.; López-González, J. M.; Pena, Tomás F. A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors. (English) Zbl 1034.82066 Int. J. Numer. Model. 16, No. 1, 53-66 (2003). MSC: 82D37 82-08 65N55 PDFBibTeX XMLCite \textit{A. J. García-Loureiro} et al., Int. J. Numer. Model. 16, No. 1, 53--66 (2003; Zbl 1034.82066) Full Text: DOI
Garcia-Loureiro, Antonio J.; Lopez-Gonzalez, Juan M.; Pena, Tomas F.; Prat, Lluis Numerical analysis of abrupt heterojunction bipolar transistors. (English) Zbl 0909.65128 Int. J. Numer. Model. 11, No. 4, 221-229 (1998). Reviewer: P.K.Mahanti (Ranchi) MSC: 65Z05 35Q60 65Y05 78A55 PDFBibTeX XMLCite \textit{A. J. Garcia-Loureiro} et al., Int. J. Numer. Model. 11, No. 4, 221--229 (1998; Zbl 0909.65128) Full Text: DOI