Cos, J.; Ferré-Borrull, J.; Pallarès, J.; Marsal, L. F. Double-cavity Fabry-Pérot tunable equalizer based on 1D photonic crystals. (English) Zbl 1197.82115 Int. J. Numer. Model. 23, No. 4-5, 400-410 (2010). MSC: 82D30 78A60 PDFBibTeX XMLCite \textit{J. Cos} et al., Int. J. Numer. Model. 23, No. 4--5, 400--410 (2010; Zbl 1197.82115) Full Text: DOI
Palomo, F. R.; Fernández-Martínez, P.; Mogollón, J. M.; Hidalgo, S.; Aguirre, M. A.; Flores, D.; López-Calle, I.; de Agapito, J. A. Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models. (English) Zbl 1197.78056 Int. J. Numer. Model. 23, No. 4-5, 379-399 (2010). MSC: 78A60 82D37 35J25 78M10 82C70 PDFBibTeX XMLCite \textit{F. R. Palomo} et al., Int. J. Numer. Model. 23, No. 4--5, 379--399 (2010; Zbl 1197.78056) Full Text: DOI
Marrero-Martín, M.; García, J.; González, B.; Hernández, A. Capacitive model for integrated PN varactors of cells with \(N^{+}\) buried layer. (English) Zbl 1197.78027 Int. J. Numer. Model. 23, No. 4-5, 364-378 (2010). MSC: 78A40 78A55 PDFBibTeX XMLCite \textit{M. Marrero-Martín} et al., Int. J. Numer. Model. 23, No. 4--5, 364--378 (2010; Zbl 1197.78027) Full Text: DOI
Albareda, G.; Alarcón, A.; Oriols, X. Electric power in nanoscale devices with full Coulomb interaction. (English) Zbl 1198.82078 Int. J. Numer. Model. 23, No. 4-5, 354-363 (2010). MSC: 82D77 82D37 81V70 82C22 PDFBibTeX XMLCite \textit{G. Albareda} et al., Int. J. Numer. Model. 23, No. 4--5, 354--363 (2010; Zbl 1198.82078) Full Text: DOI
Kowalski, L.; Ricart, J.; Jiménez, V.; Domínguez, M.; Castañer, L. Thermal modelling of the chip for the REMS wind sensor. (English) Zbl 1197.82112 Int. J. Numer. Model. 23, No. 4-5, 340-353 (2010). MSC: 82D10 80A20 76P05 85A20 PDFBibTeX XMLCite \textit{L. Kowalski} et al., Int. J. Numer. Model. 23, No. 4--5, 340--353 (2010; Zbl 1197.82112) Full Text: DOI
Alvarez, A. L.; Romero, B.; Arredondo, B.; Quintana, X.; Mallavia, R.; Otón, J. M. Electrical model of organic diodes with field-dependent carrier mobility in the presence of an electric field at the injection interface. (English) Zbl 1197.78042 Int. J. Numer. Model. 23, No. 4-5, 332-339 (2010). MSC: 78A55 78M25 PDFBibTeX XMLCite \textit{A. L. Alvarez} et al., Int. J. Numer. Model. 23, No. 4--5, 332--339 (2010; Zbl 1197.78042) Full Text: DOI
Guardiola, C.; Fleta, C.; Lozano, M.; Pellegrini, G. Silicon planar detectors adapted to slow neutron detection. (English) Zbl 1197.82135 Int. J. Numer. Model. 23, No. 4-5, 324-331 (2010). MSC: 82D75 82D37 PDFBibTeX XMLCite \textit{C. Guardiola} et al., Int. J. Numer. Model. 23, No. 4--5, 324--331 (2010; Zbl 1197.82135) Full Text: DOI
Amat, E.; Kauerauf, T.; Degraeve, R.; Rodríguez, R.; Nafría, M.; Aymerich, X.; Groeseneken, G. Simulation of the hot-carrier degradation in short channel transistors with high-k dielectric. (English) Zbl 1197.78043 Int. J. Numer. Model. 23, No. 4-5, 315-323 (2010). MSC: 78A55 78-05 PDFBibTeX XMLCite \textit{E. Amat} et al., Int. J. Numer. Model. 23, No. 4--5, 315--323 (2010; Zbl 1197.78043) Full Text: DOI
Iñiguez-de-la-Torre, I.; Mateos, J.; Pardo, D.; Song, A. M.; González, T. Enhanced Terahertz detection in self-switching diodes. (English) Zbl 1237.78043 Int. J. Numer. Model. 23, No. 4-5, 301-314 (2010). MSC: 78M31 PDFBibTeX XMLCite \textit{I. Iñiguez-de-la-Torre} et al., Int. J. Numer. Model. 23, No. 4--5, 301--314 (2010; Zbl 1237.78043) Full Text: DOI
Luque Rodríguez, A.; Jiménez Tejada, J. A.; Godoy, A.; López Villanueva, J. A.; Gómez-Campos, F. M.; Rodríguez-Bolivar, S. Localization and quantification of noise sources in four-gate field-effect-transistors. (English) Zbl 1196.82130 Int. J. Numer. Model. 23, No. 4-5, 285-300 (2010). MSC: 82D37 PDFBibTeX XMLCite \textit{A. Luque Rodríguez} et al., Int. J. Numer. Model. 23, No. 4--5, 285--300 (2010; Zbl 1196.82130) Full Text: DOI
Aboy, Maria; Pelaz, Lourdes; López, Pedro; Bruno, E.; Mirabella, S. Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions. (English) Zbl 1210.82066 Int. J. Numer. Model. 23, No. 4-5, 266-284 (2010). Reviewer: Giovanni Mascali (Arcavacata di Rende) MSC: 82D37 82C80 PDFBibTeX XMLCite \textit{M. Aboy} et al., Int. J. Numer. Model. 23, No. 4--5, 266--284 (2010; Zbl 1210.82066) Full Text: DOI
García-Loureiro, Antonio (ed.); Millán, José (ed.) Special issue: 7th Spanish conference on electron devices (CDE2009). Selected papers based on the presentations at the conference, Santiago de Compostella, Spain, February 11-13, 2009. (English) Zbl 1198.65010 Int. J. Numer. Model. 23, No. 4-5, 263-410 (2010). MSC: 65-06 00A71 65Z99 94C99 00B25 PDFBibTeX XML