El Moussati, A.; De Jaeger, J.-C.; Dalle, C. MMICs time-domain electrical physical simulator adapted to the parallel computation. (English) Zbl 1162.78301 Int. J. Numer. Model. 22, No. 3, 279-296 (2009). MSC: 78-04 78M25 65Y05 PDFBibTeX XMLCite \textit{A. El Moussati} et al., Int. J. Numer. Model. 22, No. 3, 279--296 (2009; Zbl 1162.78301) Full Text: DOI
Chaujar, Rishu; Kaur, Ravneet; Saxena, Manoj; Gupta, Mridula; Gupta, R. S. Investigation of multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) sub-50 nm MOSFET: A novel design. (English) Zbl 1162.82324 Int. J. Numer. Model. 22, No. 3, 259-278 (2009). MSC: 82D37 78A55 PDFBibTeX XMLCite \textit{R. Chaujar} et al., Int. J. Numer. Model. 22, No. 3, 259--278 (2009; Zbl 1162.82324) Full Text: DOI
Seoane, Natalia; García-Loureiro, Antonio; Aldegunde, Manuel Optimization of linear systems for 3D parallel simulation of semiconductor devices: Application to statistical studies. (English) Zbl 1162.82027 Int. J. Numer. Model. 22, No. 3, 235-258 (2009). MSC: 82D37 35J05 65Y05 65F05 65N55 65F10 PDFBibTeX XMLCite \textit{N. Seoane} et al., Int. J. Numer. Model. 22, No. 3, 235--258 (2009; Zbl 1162.82027) Full Text: DOI