Chang, Chia-Cherng; Li, Szu-Ju; Tsai, Yao-Tsung An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation. (English) Zbl 1089.78508 Int. J. Numer. Model. 19, No. 3, 289-300 (2006). MSC: 78M20 PDFBibTeX XMLCite \textit{C.-C. Chang} et al., Int. J. Numer. Model. 19, No. 3, 289--300 (2006; Zbl 1089.78508) Full Text: DOI
Menad, M.; Daveau, C. Comparison of several discretization methods of the Steklov-Poincaré operator. (English) Zbl 1089.78020 Int. J. Numer. Model. 19, No. 3, 271-287 (2006). MSC: 78M10 65N30 78M30 PDFBibTeX XMLCite \textit{M. Menad} and \textit{C. Daveau}, Int. J. Numer. Model. 19, No. 3, 271--287 (2006; Zbl 1089.78020) Full Text: DOI
Alam, M. S.; Armstrong, G. A. Accurate substrate modelling of RF CMOS. (English) Zbl 1094.94044 Int. J. Numer. Model. 19, No. 3, 257-269 (2006). MSC: 94C05 PDFBibTeX XMLCite \textit{M. S. Alam} and \textit{G. A. Armstrong}, Int. J. Numer. Model. 19, No. 3, 257--269 (2006; Zbl 1094.94044) Full Text: DOI
Prégaldiny, Fabien; Krummenacher, François; Diagne, Birahim; Pêcheux, François; Sallese, Jean-Michel; Lallement, Christophe Explicit modelling of the double-gate MOSFET with VHDL-AMS. (English) Zbl 1089.78510 Int. J. Numer. Model. 19, No. 3, 239-256 (2006). MSC: 78M25 PDFBibTeX XMLCite \textit{F. Prégaldiny} et al., Int. J. Numer. Model. 19, No. 3, 239--256 (2006; Zbl 1089.78510) Full Text: DOI
Li, Szu-Ju; Chang, Chia-Cherng; Tsai, Yao-Tsung Simulation of Si \(n\)-MOS inversion layer with Schrödinger-Poisson equivalent circuit model. (English) Zbl 1145.81358 Int. J. Numer. Model. 19, No. 3, 229-238 (2006). MSC: 81Q05 94C05 PDFBibTeX XMLCite \textit{S.-J. Li} et al., Int. J. Numer. Model. 19, No. 3, 229--238 (2006; Zbl 1145.81358) Full Text: DOI