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Identification of semiconductor contact resistivity. (English) Zbl 0749.35062

The authors consider the identification of the contact resistivity in a semiconductor device, given the contact window, the applied current density at the boundary and the resulting voltage in one boundary point. Mathematically, this is an inverse problem for a linear two-dimensional elliptic equation with Neumann boundary conditions.
The authors investigate smoothness properties of the solution operator (parameter-to-data-operator), analyse a commonly used formula for the contact resistivity and finally solve the inverse problem by Newton’s method.

MSC:

35R30 Inverse problems for PDEs
35Q60 PDEs in connection with optics and electromagnetic theory
35J25 Boundary value problems for second-order elliptic equations
78A35 Motion of charged particles
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