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Numerical discretization of energy-transport models for semiconductors with nonparabolic band structure. (English) Zbl 1049.82074

The authors developed a numerical procedure for modeling energy transports in semiconductors and give an example of its application to an one dimensional ballistic diode. The diffusion coefficients were computed for a stationary model starting from conservation equations and Boltzmann statistics. The equations were then expressed in a drift-transport formulation and solved numerically by utilizing the exponential fitting mixed finite element method for a ballistic diode. The resulting distributions of electron mean velocity, electron temperature and current were computed for nonparabolic energy bands and two different energy-transport models.

MSC:

82D37 Statistical mechanics of semiconductors
65C20 Probabilistic models, generic numerical methods in probability and statistics
65N30 Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs
78A35 Motion of charged particles
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