Degond, Pierre; Jüngel, Ansgar; Pietra, Paola Numerical discretization of energy-transport models for semiconductors with nonparabolic band structure. (English) Zbl 1049.82074 SIAM J. Sci. Comput. 22, No. 3, 986-1007 (2000). The authors developed a numerical procedure for modeling energy transports in semiconductors and give an example of its application to an one dimensional ballistic diode. The diffusion coefficients were computed for a stationary model starting from conservation equations and Boltzmann statistics. The equations were then expressed in a drift-transport formulation and solved numerically by utilizing the exponential fitting mixed finite element method for a ballistic diode. The resulting distributions of electron mean velocity, electron temperature and current were computed for nonparabolic energy bands and two different energy-transport models. Reviewer: Vladimir Čadež (Bruxelles) Cited in 24 Documents MSC: 82D37 Statistical mechanics of semiconductors 65C20 Probabilistic models, generic numerical methods in probability and statistics 65N30 Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs 78A35 Motion of charged particles Keywords:semiconductors; mixed finite element method; exponential fitting PDFBibTeX XMLCite \textit{P. Degond} et al., SIAM J. Sci. Comput. 22, No. 3, 986--1007 (2000; Zbl 1049.82074) Full Text: DOI