Radmilović-Radjenović, M.; Radjenović, B.; Savić, M. The surface charging effects in three-dimensional simulation of the profiles of plasma-etched nanostructures. (English) Zbl 1245.78013 Int. J. Numer. Model. 24, No. 6, 535-544 (2011). Summary: Particles and fields represent two major modeling paradigms in pure and applied science at all. Particles typically exist in a spatial domain, and they may interact with other particles or with field quantities defined on that domain. A field, on the other hand, defines a set of values on a region of space. In this paper, a methodology and some of the results for three-dimensional (3D) simulations that includes both field and particle abstractions are presented. In our studies, the charging damage to a semiconductor structure during plasma etching is simulated by using a 3D level set profile evolution simulator. The surface potential profiles and electric field for the entire feature are generated by solving the Laplace equation using the finite elements method. Calculations are performed in the case of the simplified model of Ar\(^{+}\)/CF\(_{4}\) non-equilibrium plasma etching of SiO\(_{2}\). Cited in 1 Document MSC: 78M10 Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory 78A35 Motion of charged particles 82D10 Statistical mechanics of plasmas 82D37 Statistical mechanics of semiconductors Keywords:plasma etching; profile charging; finite elements method; level set method PDFBibTeX XMLCite \textit{M. Radmilović-Radjenović} et al., Int. J. Numer. 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