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Analysis of parasitic quantum effects in classical CMOS circuits. (English) Zbl 1100.82022

Due to the ongoing miniaturization of integrated semiconductor devices into the mesoscopic regime, quantum effects, e.g. tunneling effects, have an increasing impact on the MOS device performance. In classical CMOS circuit these effects are parasitic since they cause a poor performance of the circuit or may even cause a failure of its functionality. The authors introduce a Spice model where quantum effects are included as an additional noise source to a classical circuit model. A one-dimensional stationary Schrödinger equation is used to model the transport processes in the mesoscopic system. The potential entering the Schrödinger equation is calculated selfconsistently by means of a Poisson equation. The authors present several test calculations of downscaled CMOS circuits in order to validate their model and discuss the impact of quantum effects on the device performance.

MSC:

82C70 Transport processes in time-dependent statistical mechanics
65Z05 Applications to the sciences
94C05 Analytic circuit theory
82D37 Statistical mechanics of semiconductors
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References:

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