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Time-domain simulation of the full hydrodynamic model. (English) Zbl 1014.82033

Summary: A simple upwind discretization of the highly coupled nonlinear differential equations which define the hydrodynamic model for semiconductors is given in full detail. The hydrodynamic model is able to describe inertia effects which play an increasing role in different fields of opto- and microelectronics. A silicon \(n^+\)-\(n\)-\(n^+\)-structure is simulated, using the energy-balance model and the full hydrodynamic model. Results for stationary cases are then compared, and it is pointed out where the energy-balance model, which is implemented in most of today’s commercial semiconductor device simulators, fails to describe accurately the electron dynamics. Additionally, a GaAs \(n^+\)-\(n\)-\(n^+\)-structure is simulated in time domain in order to illustrate the importance of inertia effects at high frequencies in modern submicron devices.

MSC:

82D37 Statistical mechanics of semiconductors
76M20 Finite difference methods applied to problems in fluid mechanics
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References:

[1] Numerical Simulation of Submicron Semiconductor Devices. Artech House: London, Boston, 1993.
[2] Blotekjaer, IEEE Transactions on Electron Devices 12 pp 38– (1970)
[3] Caughey, IEEE Proceedings 55 pp 2192– (1967)
[4] Feng, IEEE Transactions on Electron Devices 35 pp 1419– (1988)
[5] Alsunaidi, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 10 pp 107– (1997)
[6] Baccarani, Solid-State Electronics 28 pp 407– (1985)
[7] Gnudi, European Transactions on Telecommunications and Related Technologies 1 pp 307– (1990)
[8] Scharfetter, IEEE Transactions on Electron Devices 16 pp 64– (1969)
[9] Tang, IEEE Transactions on Electron Devices 1 pp 1912– (1984)
[10] Gardner, IEEE Transactions on Electron Devices 38 pp 392– (1991)
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