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Phase transition properties of ferroelectric thin film with one distinct inserting-layer. (English) Zbl 1177.82126
The paper studies the phase transition properties of the ferroelectric thin film A with one distinct inserting-layer B in the middle. First, by using the Hamiltonian of the system (the ferroelectric thin film with one distinct inserting-layer), the mean field approximation and assuming that the pseudo-spins in the same layer have the same values, it is derived into framework of the transverse Ising model a recursive equation for the phase transition properties. Then, based on this recursive equation, the authors calculate the phase diagrams of surface exchange interaction versus Curie temperature, the surface transverse field versus Curie temperature, and the polarization of different layers. The effect of the parameters of the inserting-layer B in the phase diagrams is studied while the parameters of bulk material A are fixed. The numerical results show that the phase diagrams, the crossover value of the transverse field, the ferroelectric range, the polarization of various layers, and the critical temperature depend on the transverse field and the exchange interaction of the inserting-layer B sensitively. It is shown that the numerical results qualitatively coincide with the test data for different ferroelectrics. The paper also investigates the characteristics of the dependence
82D45 Statistical mechanics of ferroelectrics
82B26 Phase transitions (general) in equilibrium statistical mechanics
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